SIMBAD references

2016ApJ...823...36T - Astrophys. J., 823, 36-36 (2016/May-3)

A Non-LTE study of silicon abundances in giant stars from the Si I infrared lines in the zJ-band.

TAN K., SHI J., TAKADA-HIDAI M., TAKEDA Y. and ZHAO G.

Abstract (from CDS):

We investigate the feasibility of Si i infrared (IR) lines as Si abundance indicators for giant stars. We find that Si abundances obtained from the Si i IR lines based on the local thermodynamic equilibrium (LTE) analysis show large line-to-line scatter (mean value of 0.13 dex), and are higher than those from the optical lines. However, when non-LTE effects are taken into account, the line-to-line scatter reduces significantly (mean value of 0.06 dex), and the Si abundances are consistent with those from the optical lines. The typical average non-LTE correction of [Si/Fe] for our sample stars is about -0.35 dex. Our results demonstrate that the Si i IR lines could be reliable abundance indicators, provided that the non-LTE effects are properly taken into account.

Abstract Copyright: © 2016. The American Astronomical Society. All rights reserved.

Journal keyword(s): Galaxy: evolution - stars: abundances - stars: atmospheres - stars: late-type

Simbad objects: 23

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2023.04.01-04:23:31

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